DocumentCode
3380318
Title
Neural modelling of the large-signal drain current of the dual-gate MESFET with DC and pulsed I-V measurements
Author
Abdeen, M. ; Yagoub, M.C.E.
Author_Institution
Ottawa Univ., Ont., Canada
Volume
5
fYear
2004
fDate
23-26 May 2004
Abstract
This work presents a neural network model of the drain current for dual-gate MESFET. The model is a combination of two sub-models; a static model represented by DC IV characteristics and dynamic model represented by pulsed IV characteristics. Pulsed measurements are performed at many bias points to capture the full dynamic behaviour of the device. The final model has a total of 25 neurons and is generated in a few minutes. The measurements and model data are in very good agreement with model error of less than 1%.
Keywords
MESFET integrated circuits; neural chips; semiconductor device models; DC measurements; bias points; dual-gate MESFET; dynamic model; full dynamic behaviour; large-signal drain current; neural modelling; neural network model; pulsed I-V measurements; static model; Current measurement; Dispersion; Electrical resistance measurement; MESFETs; Microwave FETs; Microwave devices; Neural networks; Pulse measurements; Radio frequency; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1329928
Filename
1329928
Link To Document