Via-Free Interconnection in Quasi-Hermetic Wafer-Level Packaging for RF-MEMS Applications and 3D Integration

Author

Phommahaxay, Alain ; Lissorgues, Gaëlle ; Rousseau, Lionel ; Perrais, Vincent ; Marty, Frédéric ; Bourouina, Tarik ; Nicole, Pierre

Author_Institution

ESIEE Paris - ESYCOM, Paris

fYear

2007

fDate

10-14 June 2007

Firstpage

2063

Lastpage

2066

Abstract

The development of an interconnection method based on electromagnetic coupling for hermetic or vacuum packaging in RF-MEMS applications is presented in this paper. Combined with wafer-level packaging by anodic bonding, it minimizes the leakage probability of such package by avoiding the use of vertical interconnections or horizontal feedthroughs. Electromagnetic simulations will be discussed and compared to microwave measurements on coupling structures.

Keywords

electromagnetic coupling; micromechanical devices; superconducting interconnections; wafer level packaging; 3D integration; RF-MEMS application; anodic bonding; electromagnetic coupling; electromagnetic simulation; interconnection method; leakage probability; microwave measurement; quasihermetic wafer-level packaging; vacuum packaging; Aluminum; Capacitors; Electromagnetic coupling; Fabrication; Inductors; Packaging; Radiofrequency microelectromechanical systems; Silicon; Wafer bonding; Wafer scale integration; Electromagnetic Coupling; Interconnection; Microwave Transition; Wafer-Level Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300570

Filename

4300570