DocumentCode
3380354
Title
Reliability-limiting defects in AlGaN/GaN HEMTs
Author
Roy, Tania ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Puzyrev, Yevgeniy S. ; Pantelides, Sokrates T.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fYear
2011
fDate
10-14 April 2011
Abstract
Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discussed.
Keywords
III-V semiconductors; aluminium compounds; density functional theory; gallium compounds; high electron mobility transistors; noise measurement; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; C impurity defects; HEMT; N-anti-site; density functional theory; device reliability; low-frequency noise measurements; reliability-limiting defects; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Noise; Noise measurement; Stress; 1/f noise; carbon substitutional impurity; electrical stress; high electron mobility transistors; nitrogen antisite;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784512
Filename
5784512
Link To Document