Title :
Single domain/single crystal ferroelectric PbTiO3 thin films
Author :
Wasa, Kiyotaka ; Haneda, Yoko ; Sato, Toshifumi ; Adachi, Hideaki ; Kanno, Isaku ; Schlom, Darrell G. ; Trolier-McKinstry, S. ; Gang, Qing ; Eom, C.B.
Author_Institution :
Yokohama City Univ., Japan
Abstract :
Single-domain single crystal thin films of ferroelectric PbTiO3 (PT) were epitaxially grown on the miscut SrTiO3 (ST) substrate by the sputtering. The film thickness was ranged from 5 to 260 nm. The films were grown under the step flow growth. The PT thin films were tetragonally deformed and tightly bonded to the substrate without an interfacial layer. The saturation polarization, the coercive field, and the dielectric constant were 40 μC/cm2, 400 to 500 kV/cm, and 60 to 70 (at 1 kHz), respectively. The PT thin films showed no clear anomaly on the curve of c-lattice parameter in term of temperature
Keywords :
dielectric polarisation; electric domains; epitaxial layers; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; sputtered coatings; 1 kHz; 5 to 260 nm; PbTiO3; SrTiO3; c-lattice parameter; coercive field; dielectric constant; ferroelectric PbTiO3 thin films; interfacial layer; miscut SrTiO3 substrate; saturation polarization; single-domain single crystal thin films; step flow growth; tetragonally deformed; tightly bonded; Atomic force microscopy; Crystal microstructure; Dielectric thin films; Ferroelectric materials; Photonic crystals; Scanning electron microscopy; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762225
