Title :
Microwave properties of La-doped lead titanate piezoelectric films for bulk acoustic wave resonators
Author :
Maeda, C. ; Yamada, A. ; Uchikawa, F. ; Misu, K. ; Wadaka, S. ; Shinada, J.
Author_Institution :
Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
The bulk acoustic wave resonators at GHz bands were fabricated by using La-doped and non-doped lead titanate piezoelectric films which were deposited by RF magnetron sputtering method. Though crystallinity of the La-doped PT film was inferior to that of the non-doped PT film, the dense and pore less film with columnar structure was obtained. The non-doped PT film had superior crystallinity, but some pores were observed. Resonances for the bulk acoustic mode occurred around 1.4 GHz. The electrical Q of La-doped and non-doped PT films were estimated to be 100 and 70, respectively. By doping La, the dense PT films were obtained and the improvement of the Q value was accomplished
Keywords :
acoustic resonators; lanthanum compounds; lead compounds; piezoelectric materials; piezoelectric thin films; sputtered coatings; (PbLa)TiO3; 1.4 GHz; GHz bands; La-doped lead titanate piezoelectric films; RF magnetron sputtering method; acoustic wave resonators; columnar structure; microwave properties; Acoustic waves; Crystallization; Electrodes; Film bulk acoustic resonators; Magnetic resonance; Piezoelectric films; Radio frequency; Sputtering; Substrates; Titanium compounds;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.762227
