Title :
A CW 7-12 GHz GaN Hybrid Power Amplifier IC with High PAE Using the Load-Impedance Change Compensation Technique
Author :
Inoue, Y. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Hara, N. ; Shigematsu, H. ; Joshin, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
Abstract :
In this paper, we demonstrated a broadband GaN power amplifier hybrid IC with high power added efficiency (PAE) under CW operation using load-impedance change compensation technique. The external output matching circuit is composed of a transmission line, an open stub and a short stub with chip capacitors to realize both wide bandwidth and high voltage operation. As a result, we developed 7-12 GHz broadband medium power amplifier and demonstrated a CW output power of 6.5 W with the PAE of 40% using 0.5-mum GaN-HEMT technology at 7 GHz. The output power also exceeded 4.9 W with PAE of over 31% up to 11 GHz. At 12 GHz, the output power was 4.1 W with PAE of 26%.
Keywords :
III-V semiconductors; capacitors; gallium compounds; high electron mobility transistors; hybrid integrated circuits; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; CW operation; GaN; HEMT technology; broadband power amplifier; chip capacitors; frequency 7 GHz to 12 GHz; high power added efficiency; hybrid integrated circuit; hybrid power amplifier; load-impedance change compensation; matching circuit; microwave power amplifier; size 0.5 mum; Broadband amplifiers; Distributed parameter circuits; Gallium nitride; High power amplifiers; Hybrid integrated circuits; Impedance matching; Operational amplifiers; Power amplifiers; Power generation; Power transmission lines;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.41
