• DocumentCode
    3380419
  • Title

    A CW 7-12 GHz GaN Hybrid Power Amplifier IC with High PAE Using the Load-Impedance Change Compensation Technique

  • Author

    Inoue, Y. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Hara, N. ; Shigematsu, H. ; Joshin, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi
  • fYear
    2008
  • fDate
    12-15 Oct. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we demonstrated a broadband GaN power amplifier hybrid IC with high power added efficiency (PAE) under CW operation using load-impedance change compensation technique. The external output matching circuit is composed of a transmission line, an open stub and a short stub with chip capacitors to realize both wide bandwidth and high voltage operation. As a result, we developed 7-12 GHz broadband medium power amplifier and demonstrated a CW output power of 6.5 W with the PAE of 40% using 0.5-mum GaN-HEMT technology at 7 GHz. The output power also exceeded 4.9 W with PAE of over 31% up to 11 GHz. At 12 GHz, the output power was 4.1 W with PAE of 26%.
  • Keywords
    III-V semiconductors; capacitors; gallium compounds; high electron mobility transistors; hybrid integrated circuits; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; CW operation; GaN; HEMT technology; broadband power amplifier; chip capacitors; frequency 7 GHz to 12 GHz; high power added efficiency; hybrid integrated circuit; hybrid power amplifier; load-impedance change compensation; matching circuit; microwave power amplifier; size 0.5 mum; Broadband amplifiers; Distributed parameter circuits; Gallium nitride; High power amplifiers; Hybrid integrated circuits; Impedance matching; Operational amplifiers; Power amplifiers; Power generation; Power transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-1939-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2008.41
  • Filename
    4674496