DocumentCode :
3380434
Title :
New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs
Author :
Sagong, Hyun Chul ; Kang, Chang Yong ; Sohn, Chang-Woo ; Park, Min Sang ; Choi, Do-Young ; Jeong, Eui-Young ; Lee, Jack C. ; Jeong, Yoon-Ha
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
fYear :
2011
fDate :
10-14 April 2011
Abstract :
Hot carrier effects on RF small-signal parameters in high-k/metal gate nMOSFETs are characterized by DC and RF measurements. To explain the novel hot carrier-induced degradation, we suggest a modified surface channel resistance model that can be applied to both conventional SiO2 and high-k nMOSFETs.
Keywords :
MOSFET; hot carriers; DC measurement; RF measurement; RF small-signal parameters; high-k nMOSFETs; high-k/metal gate nMOSFETs; hot carrier degradation; hot carrier effects; hot carrier-induced degradation; surface channel resistance model; Capacitance; High K dielectric materials; Logic gates; MOSFETs; Radio frequency; Resistance; Stress; MOSFET; RF; high-k; hot carriers; resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2011.5784516
Filename :
5784516
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3380434
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