Title :
RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth
Author :
Krishnamurthy, K. ; Wang, D. ; Landberg, B. ; Martin, J.
Author_Institution :
Aerosp. & Defense Bus. Unit, RF Micro Devices Inc., Charlotte, NC
Abstract :
We have demonstrated a RLC matched GaN HEMT power amplifier with 12 dB gain, 0.05-2.0 GHz bandwidth, 8 W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic S08 package and contains a GaN on SiC device operating at 28 V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48 V operation and 15 W CW power over the same band, obtains over 20 W under pulsed condition with 10% duty cycle and 100 mus pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.
Keywords :
III-V semiconductors; UHF power amplifiers; VHF amplifiers; gallium arsenide; gallium compounds; high electron mobility transistors; packaging; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; GaAs; GaN; RLC matched HEMT power amplifier; SiC; bandwidth 0.05 GHz to 2.0 GHz; ceramic S08 package; gain 12 dB; handheld radios; high power package; integrated passive matching circuitry; jamming applications; semiconductor device; voltage 28 V; voltage 48 V; wideband digital cellular infrastructure; Bandwidth; Gain; Gallium nitride; HEMTs; Packaging; Power amplifiers; Pulse amplifiers; Pulse circuits; RLC circuits; Space vector pulse width modulation;
Conference_Titel :
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-1939-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2008.42
