DocumentCode :
3380509
Title :
Electron beam direct writing systems for 64 Mbit DRAM and beyond
Author :
Nakamura, Kazumitsu ; Saitou, Norio
Author_Institution :
Naka Works, Hitachi Ltd, Katsuta, Japan
fYear :
1991
fDate :
22-24 May 1991
Firstpage :
33
Lastpage :
37
Abstract :
The features of the current EB system, HL-700 series and its performances are presented. The basic concept and some experimental results of the next generation system which has a key technology of cell projection is proposed
Keywords :
DRAM chips; electron beam lithography; integrated circuit technology; 64 Mbit; DRAM; HL-700 series; cell projection; electron beam direct writing; electron beam lithography; performances; Cathodes; Circuits; Electron beams; Electron optics; Fabrication; Hardware; Random access memory; Resists; Throughput; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-0036-X
Type :
conf
DOI :
10.1109/VTSA.1991.246717
Filename :
246717
Link To Document :
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