Selective silylation and plasma patterning of photoresist in submicron lithography

Author

Chen, Bomy ; Ma, T.P.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1991

fDate

22-24 May 1991

Firstpage

28

Lastpage

32

Abstract

Recent results concerning selective vapor-phase silylation on conventional photoresists and subsequent pattern delineation of modified resists using reactive ion etching are presented. Four resist design guidelines for improved image contrast and resolution in submicron silylation lithography are introduced, the key mechanisms are discussed, the nonlinear resist development behavior is described, and an integrated model for selective silylation lithography is presented

Keywords

integrated circuit technology; photoresists; sputter etching; image contrast; integrated model; modified resists; nonlinear resist development; pattern delineation; photoresist; plasma patterning; reactive ion etching; resist design guidelines; resolution; selective vapor-phase silylation; submicron lithography; Etching; Guidelines; Image resolution; Lithography; Optical imaging; Plasma applications; Plasma chemistry; Plasma materials processing; Resists; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-0036-X

Type

conf

DOI

10.1109/VTSA.1991.246718

Filename

246718