5V-only, standard 0.5μm CMOS programmable and adaptive floating-gate circuits and arrays using CMOS charge pumps

Author

Hooper, Mark ; Kucic, Matt ; Hasler, Paul

Author_Institution

Sch. of Electr. amd Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

5

fYear

2004

fDate

23-26 May 2004

Abstract

This work presents the integration of high voltage charge pumps into floating-gate arrays in a standard 0.5μm CMOS n-well double poly process. In this research two different Dickson charge pumps are presented for the tunnelling and injection in floating-gate circuits and arrays. A six stage design implemented with Schottky rectifiers is used to modulate tunneling and a three stage high voltage design is used to modulate injection. The Schottky configuration is able to boost the output voltage to approximately 18V while sourcing 1μA and the high voltage configuration is able to boost the output voltage to approximately 7V while sourcing 0.1μA. In both cases no voltage skipping is observed in the output voltage. Experimental results and analysis of each configuration are presented.

Keywords

CMOS logic circuits; Schottky diodes; high-voltage techniques; integrated circuit design; programmable circuits; rectifiers; tunnelling; 0.5 micron; 1 muA; 18 V; 5 V; 7 V; CMOS charge pumps; Dickson charge pumps; Schottky configuration; Schottky rectifiers; adaptive floating-gate circuits; floating-gate arrays; high voltage charge pumps; high voltage design; modulated injection; n-well double poly process; programmable floating-gate circuits; voltage skipping; Adaptive arrays; CMOS process; CMOS technology; Charge pumps; Circuits; EPROM; Nonvolatile memory; Predictive models; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium on

Print_ISBN

0-7803-8251-X

Type

conf

DOI

10.1109/ISCAS.2004.1329937

Filename

1329937