Title :
Advanced i-line lithography for 0.5 μm CMOS technology
Author :
Yang, T. ; Fu, C.C. ; Wolf, T.M. ; Adams, T.E. ; Costigan, J.G. ; Ryan, J.L. ; Schrope, D.E. ; Stone, D.R. ; Cuthbert, J.D.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
A cost-effective 0.5 μm lithographic capability has been developed using a reduction stepper with a 0.45 Na i-line lens and new photoresists. Resist processes provide excellent CD and sidewall angle control, with satisfactory exposure latitude. Resist pattern fidelity has been improved through computer-optimized reticle pattern modifications using serifs. Focus latitude has been significantly improved by application of new latent image metrology techniques. The authors provide an overview of these of other aspects and the lithographic process
Keywords :
CMOS integrated circuits; integrated circuit technology; photolithography; 0.5 micron; advanced i-line lithography; computer-optimized reticle pattern modifications; critical dimension control; exposure latitude; focus latitude; latent image metrology; pattern fidelity; photoresists; reduction stepper; serifs; sidewall angle control; sub half-micron CMOS; Application software; Automatic control; Availability; CMOS technology; Focusing; Lenses; Linearity; Lithography; Metrology; Resists;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246719
