A V-Band High Power and High Gain Amplifier MMIC using GaAs PHEMT Technology

Author

Chaki, Shin ; Amasuga, Hirotaka ; Goto, Seiki ; Kanaya, Ko ; Yamamoto, Yoshitsugu ; Oku, Tomoki ; Ishikawa, Takahide

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami

fYear

2008

fDate

12-15 Oct. 2008

Firstpage

1

Lastpage

4

Abstract

We report the performance of a V-band 5-stage high power amplifier MMIC using a millimeter-wave 0.1 mum GaAs pHEMT. It has demonstrated that an output power of 28.8 dBm (759 mW) at 1 dB compression point with 17.8 dB power gain and 14.2% PAE at 59 GHz. And it delivers an output power of 28.9 dBm (776 mW) at a saturation point. These results represent, to the best of our knowledge, the highest output power and power gain for single-ended MMICs.

Keywords

III-V semiconductors; MMIC amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; PHEMT technology; V-band high power amplifier; efficiency 14.2 percent; gain 17.8 dB; high gain amplifier MMIC; power 759 mW; power 776 mW; size 0.1 mum; Frequency; Gain; Gallium arsenide; High power amplifiers; MMICs; Millimeter wave technology; Optical amplifiers; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-1939-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2008.48

Filename

4674503