• DocumentCode
    3380589
  • Title

    A new scheme for testability improvement of ECC incorporated memory

  • Author

    Wang, Lei ; Jiang, Jianhua ; Zhou, Yumei ; Ren, Gaofeng

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    240
  • Lastpage
    243
  • Abstract
    With the technology node going to the nanometer region, the chips, especially the memory parts, face a huge challenge in the reliability. The error-correcting code (ECC) is a traditional way to improve the chips´ reliability; however, it has a problem that the memory with ECC attached is difficult to be test in normal lab situation. To solve this problem, we design a new scheme for the input part of the memory to enable a “wrong” check bits to be inputted into the memory. The chips using this method have been taped out and the test results show that their testability have been increased with little harm to the performance in other aspects.
  • Keywords
    error correction codes; integrated circuit design; integrated circuit reliability; integrated circuit testing; random-access storage; ECC; ECC incorporated memory; error-correcting code; nanometer region; reliability; testability improvement; Hip; Reliability engineering; Reliability theory; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157166
  • Filename
    6157166