DocumentCode
3380608
Title
Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects
Author
Ganesh, K.J. ; Rajasekhara, S. ; Bultreys, D. ; Ferreira, P.J.
Author_Institution
Mater. Sci. & Eng. Program, Univ. of Texas - Austin, Austin, TX, USA
fYear
2011
fDate
10-14 April 2011
Abstract
A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.
Keywords
copper; diffraction; finite element analysis; grain boundaries; interconnections; nanostructured materials; scanning-transmission electron microscopy; Cu; D-STEM; automated grain orientation; copper microstructure; diffraction scanning transmission electron microscopy; finite element analysis; grain boundary analysis; nanoscale copper interconnect line; size 120 mm; Copper; Diffraction; Finite element methods; Grain boundaries; Microscopy; Microstructure; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784524
Filename
5784524
Link To Document