Title :
Rapid and automated grain orientation and grain boundary analysis in nanoscale copper interconnects
Author :
Ganesh, K.J. ; Rajasekhara, S. ; Bultreys, D. ; Ferreira, P.J.
Author_Institution :
Mater. Sci. & Eng. Program, Univ. of Texas - Austin, Austin, TX, USA
Abstract :
A combination of diffraction scanning transmission electron microscopy (D-STEM) and automated precession microscopy is used to obtain orientation information from 108 copper grains in 120 nm wide copper interconnect lines. Grain boundary analysis based on this orientation data reveals that Σ3n (n = 1, 2) boundaries are predominant in these lines. Finite element analysis reveals regions of high and low stresses within the copper microstructure.
Keywords :
copper; diffraction; finite element analysis; grain boundaries; interconnections; nanostructured materials; scanning-transmission electron microscopy; Cu; D-STEM; automated grain orientation; copper microstructure; diffraction scanning transmission electron microscopy; finite element analysis; grain boundary analysis; nanoscale copper interconnect line; size 120 mm; Copper; Diffraction; Finite element methods; Grain boundaries; Microscopy; Microstructure; Stress;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784524
