DocumentCode
3380627
Title
Process development for tailoring the emitter on sphere shaped silicon structures
Author
Gharghi, Majid ; Sivoththaman, Siva
Author_Institution
Center for Advanced Photovoltaic Devices and Systems, Department of Electrical and Computer Engineering, University of Waterloo, Ontario, Canada
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
A dry process is developed for the etch-back of spherical silicon surfaces, intended for thinning of the emitter in spherical pn photodiode. The process is based on reactive ion etching, and enjoys higher reliability and controllability compared to wet etching. The process conditions are controlled to obtain an angle-dependent selective etch rate across the spherical surface.
Keywords
Atomic layer deposition; Cathodes; Chemical processes; Controllability; Dry etching; Immune system; Plasma accelerators; Plasma chemistry; Silicon; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922675
Filename
4922675
Link To Document