DocumentCode :
3380650
Title :
Single event upset immune latch circuit design using C-element
Author :
Rajaei, Ramin ; Tabandeh, Mahmoud ; Rashidian, Bizhan
Author_Institution :
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
252
Lastpage :
255
Abstract :
Downscaling trend in CMOS technology on the one hand and reducing supply voltage of the circuits on the other hand, make devices more susceptive to soft errors such as SEU. Latch circuits are prone to be affected by SEUs. In this article, we propose a new circuit design of latch using redundancy with the aim of immunity against SEUs. According to simulation results, our design not only guaranties full immunity, but also has the advantage of occupying less area and consuming much less power and performance penalty in comparison with other SEU immune latches. The simulation results show that our solution has 65.76% reduction in power and about 50.65% reduction in propagation delay in comparison with TMR-latch.
Keywords :
CMOS integrated circuits; flip-flops; integrated circuit design; radiation effects; C-element; CMOS technology; redundancy; single event upset immune latch circuit design; soft errors; Clocks; Equations; Latches; Nickel; Tunneling magnetoresistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157169
Filename :
6157169
Link To Document :
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