DocumentCode :
3380679
Title :
Gallium arsenide and silicon for optical electronics: applications and technology trade-offs
Author :
Swartz, Robert G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fYear :
1991
fDate :
22-24 May 1991
Firstpage :
389
Lastpage :
393
Abstract :
Compound semiconductor technology has enjoyed astonishing successes recently, and is quickly finding its way into the consumer area. But silicon bipolar technology stands newly rejuvenated, while CMOS continues to improve its performance and consume ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of Megahertz to multi-Gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This talk reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits, demerits and market trends for these competing, yet often complementary IC technologies
Keywords :
integrated circuit technology; integrated optoelectronics; optical communication equipment; GaAs; IC technologies; Si; gallium arsenide technology; market trends; optical communications; optical electronics; silicon technology; technology trade-offs; CMOS technology; Consumer electronics; Gallium arsenide; High speed optical techniques; Integrated circuit technology; Optical fiber communication; Optical receivers; Optical transmitters; Repeaters; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
ISSN :
1524-766X
Print_ISBN :
0-7803-0036-X
Type :
conf
DOI :
10.1109/VTSA.1991.246725
Filename :
246725
Link To Document :
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