Title :
Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)
Author :
Kindereit, Ulrike ; Mutihac, Oana-Mihaela ; Boit, Christian ; Tillack, Bernd
Author_Institution :
Circuit Test & Diagnostics Technol., IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This publication presents photon emission measurements of SiGe:C-HBTs acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium.
Keywords :
CCD image sensors; Ge-Si alloys; carbon; heterojunction bipolar transistors; photodetectors; photoemission; InGaAs; Si; SiGe:C; heterojunction bipolar transistors; photon emission measurement; spectral resolution; Cameras; Heterojunction bipolar transistors; Junctions; Photonic band gap; Silicon; Spontaneous emission; HBT; InGaAs-camera; Photon emission; Si-CCD-camera; SiGe; heterojunction bipolar transistor; spectral analysis;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784527
