Title :
Challenges of electrostatic discharge (ESD) protection in emerging silicon nanowire technology
Author :
Liou, Juin J. ; Jiang, Chang ; Guang-Biao, Cao ; Gung, Chang ; Chia, Feng
Author_Institution :
Univ. of Central Florida, Orlando, FL, USA
Abstract :
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of the emerging and increasingly important Si nanowire technology.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; nanowires; semiconductor industry; silicon; CMOS technology; Si; electrostatic discharge protection; reliability concern; semiconductor industry; silicon nanowire technology; size 22 nm; Electric potential; Integrated circuits; Robustness;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157170
