Title :
Large-area MOVPE growth for HEMT LSI
Author :
Ohori, T. ; Tomesakai, N. ; Suzuki, M. ; Notomi, S. ; Komeno, J.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Reports on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. The low-pressure barrel reactor can grow twelve 3-inch wafers at a time. It is shown that the grown layers meet the demands for LSI application. The authors fabricated HEMT devices with gates 0.6 μm long using photolithography, with excellent characteristics. They applied the MOVPE technique to HEMT 64 Kb SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W
Keywords :
SRAM chips; field effect integrated circuits; high electron mobility transistors; large scale integration; photolithography; vapour phase epitaxial growth; 0.6 micron; 1.2 ns; 5.9 W; 64 kbit; HEMT LSI; SRAM; address access time; grown layers; low-pressure barrel reactor; metalorganic vapor phase epitaxy; photolithography; Capacitance-voltage characteristics; Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; Inductors; Large scale integration; Pollution measurement; Random access memory; Surface contamination;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246727
