Characteristics of vertical p-channel MOSFETs for high density circuit application

Author

Wen, D.S. ; Chang, W.H. ; Rajeevakumar, T.V. ; Bronner, G.B. ; McFarland, P.A. ; Lii, Y. ; Chen, T.C. ; Pesavento, F.L. ; Manny, M.P. ; Hwang, W. ; Dhong, S.H.

Author_Institution

IBM Adv. Semicond. Technol. Center, Hopewell Junction, NY, USA

fYear

1991

fDate

22-24 May 1991

Firstpage

376

Lastpage

379

Abstract

Vertical p-channel MOSFETs have been experimentally fabricated and characterized. Device characteristics of vertical p-channel MOSFETs are comparable to those of planar surface devices. Conduction current of a vertical transistor can be increased as much as four times that of a planar transistor for the same device area. The feature of large W/L ratio allows further increase in device density. Conduction current increases linearly with the channel width. No 3D current conduction degradation effect has been observed. It is found that the crystallographic orientation of the conduction channel has some effect on the threshold and sub-threshold characteristics, due to oxide thickness difference or fixed charges in the oxide interface

Keywords

MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit technology; integrated memory circuits; W/L ratio; channel width; conduction current; crystallographic orientation; high density circuit application; oxide interface; oxide thickness; sub-threshold characteristics; vertical p-channel MOSFETs; Capacitors; Circuits; DH-HEMTs; Degradation; Etching; MOSFETs; Oxidation; Random access memory; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-0036-X

Type

conf

DOI

10.1109/VTSA.1991.246728

Filename

246728