• DocumentCode
    3380755
  • Title

    Al/Si back contact with improved resistivity and contact resistance by an optimized RTP temperature-time profile

  • Author

    Muehlbauer, M. ; Gazuz, V. ; Auer, R. ; Mueller, T. ; Fahrner, W.R.

  • Author_Institution
    Bavarian Center for Applied Energy Research (ZAE Bayern), Am Weichselgarten 7, 91058 Erlangen, Germany
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    An innovative solar cell concept based on bonding silicon wafer to a supporting glass was presented in [1]. The bonding is achieved with aluminum and by means of an RTP step.
  • Keywords
    Aluminum alloys; Conductivity; Contact resistance; Cooling; Electrical resistance measurement; Glass; Photovoltaic cells; Silicon alloys; Transmission line measurements; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922681
  • Filename
    4922681
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380755