Title :
Peeling-free tungsten polycide process and its application in DRAM fabrication
Author :
Yoo, C.S. ; Lin, T.H. ; Lin, M.S. ; IJzendoorn, L.J.
Author_Institution :
R&D, Taiwan Semicond. Manuf. Co., Hsin-chu, Taiwan
Abstract :
The adhesion of tungsten silicide on polysilicon is an often seen problem associated with the applications of tungsten polycide films in device fabrications. This work, correlates the film adhesion to film composition changes in post-deposition thermal treatments. RBS and SIMS are used to explore the film composition and characteristics changes. The silicon diffusion mechanism is illustrated. The silicide peeling phenomena is investigated with a DRAM device vehicle. Based on the results, approaches to prevent silicide peeling are proposed
Keywords :
DRAM chips; Rutherford backscattering; metallisation; secondary ion mass spectroscopy; tungsten compounds; DRAM fabrication; RBS; SIMS; WSix-Si; diffusion mechanism; film adhesion; film composition; post-deposition thermal treatments; silicide peeling phenomena; Annealing; Atomic layer deposition; Atomic measurements; Fabrication; Oxidation; Random access memory; Semiconductor films; Silicides; Tensile stress; Tungsten;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246729
