DocumentCode
3380791
Title
A 0.5 μm diode load 4 Mb SRAM technology using double-level Al plug metal process
Author
Sundaresan, R. ; Wei, C.C. ; Zamanian, M. ; Chen, F.S. ; Miller, R.O. ; Hodges, R.L. ; Gaskins, W. ; Sagarwala, P. ; Nguyen, L. ; Huang, J. ; Spinner, C. ; Stagaman, G.S. ; Lu, L. ; Lin, Y.S. ; Bryant, F. ; Liou, F.T.
Author_Institution
Sgs-Thomson Microelectron., Carrollton, TX, USA
fYear
1991
fDate
22-24 May 1991
Firstpage
362
Lastpage
365
Abstract
A 4 Mb SRAM technology using 0.5 μm transistors with 12.5 nm gate oxide, TiN local interconnection, polysilicon diode loads, and Al plug double level metallization is described. The use of diode load yields TΩ polysilicon resistors whose values are nearly independent of geometry. Complete filling of 0.6 μm contacts and vias are obtained using Al plug metallization
Keywords
SRAM chips; integrated circuit technology; metallisation; 0.5 micron; 4 Mbit; SRAM technology; TiN local interconnection; contact filling; double level metallization; double-level Al plug metal process; gate oxide; polysilicon diode loads; polysilicon resistors; Aluminum; Current measurement; Diodes; Filling; Implants; Metallization; Plugs; Random access memory; Resistors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location
Taipei
ISSN
1524-766X
Print_ISBN
0-7803-0036-X
Type
conf
DOI
10.1109/VTSA.1991.246731
Filename
246731
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