Title :
DRAM technology trend and prospect
Author :
Shichijo, Hisashi
Author_Institution :
Semicond. Process & Design Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
With the successful development of 64 Mbit DRAMs, the pursuit for high density DRAMs continues. This talk discusses the DRAM technology trend primarily from device and circuit points of view, and examines the feasibility and requirements for the next generation 256 Mbit DRAMs
Keywords :
DRAM chips; integrated circuit technology; 256 Mbit; 64 Mbit; DRAM technology trend; high density DRAMs; Coupling circuits; Ferroelectric films; Flexible printed circuits; Instruments; Packaging; Power supplies; Process design; Random access memory; Regulators; Voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-0036-X
DOI :
10.1109/VTSA.1991.246734
