Title :
Development of a functional model for the Nanoparticle-Organic Memory transistor
Author :
Bichler, O. ; Zhao, W.S. ; Gamrat, C. ; Alibart, F. ; Pleutin, S. ; Vuillaume, D.
Author_Institution :
Embedded Comput. Lab., CEA, Gif-sur-Yvette, France
fDate :
May 30 2010-June 2 2010
Abstract :
Emerging synapse-like nanoscale devices such as memristive devices and synaptic transistors are of great interest to inspire new circuits or systems and promise adaptability, high density and robustness. We reported recently the Nanoparticle-Organic Memory FET transistor (NOMFET), which exhibits interesting behaviors similar to a biological spiking synapse in neural network. A functional model of NOMFET is presented in this paper, which agrees well with the experimental results. It allows then the reliable conception and simulation of hybrid Nano/CMOS circuits. The model is developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.1.41 simulator. An iterative physical model and a number of experimental parameters have been integrated to improve the simulation accuracy.
Keywords :
field effect transistors; Cadence Virtuoso platform; NOMFET functional model; Spectre 5.1.41 simulator; Verilog-A language; biological spiking synapse; hybrid Nano/CMOS circuit; memristive device; nanoparticle-organic memory FET transistor; neural network; synapse-like nanoscale device; synaptic transistor; Biological system modeling; CMOS memory circuits; Circuit simulation; FETs; Integrated circuit reliability; Nanobioscience; Nanoscale devices; Neural networks; Robustness; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537487
