A Dram-Like Mechanical Non-Volatile Memory

Author

Jang, Weon Wi ; Lee, Jeong Oen ; Yoon, Jun-Bo

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2007

fDate

10-14 June 2007

Firstpage

2187

Lastpage

2190

Abstract

A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.

Keywords

CMOS memory circuits; micromachining; microswitches; random-access storage; CMOS-compatible poly-Si surface micromachining; DRAM-like mechanical nonvolatile memory; MEMS switch; CMOS technology; Micromachining; Micromechanical devices; Microswitches; Nonvolatile memory; Random access memory; Semiconductor films; Silicon; Switches; Threshold voltage; DRAM; MEMS; mechanical NVM; non-volatile memory (NVM); surface micromachining;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300601

Filename

4300601

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3380911