A high performance MCM-D using Cu/fluoropolymer thin film multilayer technology

Author

Jikuhara, Ryoji ; Tanahashi, Shigeo

Author_Institution

Kyocera Corp., Kagoshima, Japan

fYear

1995

fDate

2-4 Oct 1995

Firstpage

98

Lastpage

101

Abstract

A new high performance MCM-D technology has been developed utilizing Copper conductors and CPFP (Cyclized-Perfluoropolymer) dielectrics. The cyclized-perfluoropolymer has a dielectric constant of around 2.0 and a tan σ of 7.0×10^-4 at 1 GHz. Conductor metallization adhesion on CPFP was measured at 2 Kg/mm² with the addition of a adhesive thin film metal. Adhesion of the conductor metallization to the via hole structure is achieved by dry etch processing. A test vehicle was fabricated with four conductor layers (Gnd/Sig/Sig/Grn). Signal transmission line electrical performance was measured by the Time-Domain Reflection (TDR) method. The test vehicle had excellent electrical characteristics. A propagation delay of 48.9 ps/cm was achieved

Keywords

adhesion; copper; high-frequency transmission line measurement; integrated circuit metallisation; integrated circuit packaging; multichip modules; polymer films; sputter etching; thin film circuits; time-domain reflectometry; 1 GHz; Cu; Cu conductors; adhesive thin film metal; characteristic impedance; cyclized-perfluoropolymer dielectrics; dielectric constant; dry etch processing; electrical characteristics; high performance MCM-D technology; loss tangent; metallization adhesion; propagation delay; signal transmission line electrical performance; thin film multilayer technology; time-domain reflection; via hole structure; Adhesives; Conductive films; Conductors; Copper; Dielectric constant; Dielectric measurements; Dielectric thin films; Metallization; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 1995

Conference_Location

Portland, OR

Print_ISBN

0-7803-3034-X

Type

conf

DOI

10.1109/EPEP.1995.524863

Filename

524863