A new type of curvature-compensated CMOS bandgap voltage references

Author

Chin, Shu-Yw ; Wu, Chmg-Yu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

1991

fDate

22-24 May 1991

Firstpage

398

Lastpage

402

Abstract

Precise CMOS bandgap voltage references which uses the difference of MOS source-gate voltages to perform efficient curvature compensation have been designed and fabricated. The reference circuits use less than 18 transistors. However, they can achieve precise reference voltages. Experimental chip shows an average drift of 5.5 ppm/°C from -60°C to 150°C and 25 μV/V for supply voltages from 5 V to 15 V at 25°C. Due to novel curvature compensation, the circuit structure of the proposed references is simple and both chip area and power consumption are small

Keywords

CMOS integrated circuits; linear integrated circuits; reference circuits; -60 to 150 degC; 5 to 15 V; MOS source-gate voltages; chip area; circuit structure; curvature-compensated CMOS bandgap voltage references; power consumption; precise reference voltages; Bipolar transistors; Circuits; Design engineering; High power amplifiers; MOSFETs; Mirrors; Operational amplifiers; Photonic band gap; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-0036-X

Type

conf

DOI

10.1109/VTSA.1991.246749

Filename

246749