DocumentCode
3381217
Title
Through-Silicon-Via assignment for 3D ICs
Author
Ao, Jianchang ; Dong, Sheqin ; Chen, Song ; Goto, Satoshi
Author_Institution
Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
353
Lastpage
356
Abstract
Three-dimensional integrated circuits (3D ICs) can alleviate the interconnect problem coming with the decreasing feature size and increasing integration density, and promise a solution to heterogeneous integration. The inter-layer connection, which is generally implemented by the Through-Silicon-Via (TSV), is a key technology for 3D ICs. In this paper, we propose a unified simulated annealing technology to tackle the TSV assignment problem, including the signal TSV assignment of 3D nets and 3D buses. The experiment results show the effective of the method.
Keywords
integrated circuit interconnections; simulated annealing; three-dimensional integrated circuits; 3D IC; feature size; heterogeneous integration; integration density; inter-layer connection; interconnect problem; simulated annealing; three-dimensional integrated circuits; through-silicon-via assignment; Annealing; Performance evaluation; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157194
Filename
6157194
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