DocumentCode :
3381217
Title :
Through-Silicon-Via assignment for 3D ICs
Author :
Ao, Jianchang ; Dong, Sheqin ; Chen, Song ; Goto, Satoshi
Author_Institution :
Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
353
Lastpage :
356
Abstract :
Three-dimensional integrated circuits (3D ICs) can alleviate the interconnect problem coming with the decreasing feature size and increasing integration density, and promise a solution to heterogeneous integration. The inter-layer connection, which is generally implemented by the Through-Silicon-Via (TSV), is a key technology for 3D ICs. In this paper, we propose a unified simulated annealing technology to tackle the TSV assignment problem, including the signal TSV assignment of 3D nets and 3D buses. The experiment results show the effective of the method.
Keywords :
integrated circuit interconnections; simulated annealing; three-dimensional integrated circuits; 3D IC; feature size; heterogeneous integration; integration density; inter-layer connection; interconnect problem; simulated annealing; three-dimensional integrated circuits; through-silicon-via assignment; Annealing; Performance evaluation; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157194
Filename :
6157194
Link To Document :
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