Title :
Through-Silicon-Via assignment for 3D ICs
Author :
Ao, Jianchang ; Dong, Sheqin ; Chen, Song ; Goto, Satoshi
Author_Institution :
Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
Three-dimensional integrated circuits (3D ICs) can alleviate the interconnect problem coming with the decreasing feature size and increasing integration density, and promise a solution to heterogeneous integration. The inter-layer connection, which is generally implemented by the Through-Silicon-Via (TSV), is a key technology for 3D ICs. In this paper, we propose a unified simulated annealing technology to tackle the TSV assignment problem, including the signal TSV assignment of 3D nets and 3D buses. The experiment results show the effective of the method.
Keywords :
integrated circuit interconnections; simulated annealing; three-dimensional integrated circuits; 3D IC; feature size; heterogeneous integration; integration density; inter-layer connection; interconnect problem; simulated annealing; three-dimensional integrated circuits; through-silicon-via assignment; Annealing; Performance evaluation; Through-silicon vias;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157194