• DocumentCode
    3381217
  • Title

    Through-Silicon-Via assignment for 3D ICs

  • Author

    Ao, Jianchang ; Dong, Sheqin ; Chen, Song ; Goto, Satoshi

  • Author_Institution
    Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    353
  • Lastpage
    356
  • Abstract
    Three-dimensional integrated circuits (3D ICs) can alleviate the interconnect problem coming with the decreasing feature size and increasing integration density, and promise a solution to heterogeneous integration. The inter-layer connection, which is generally implemented by the Through-Silicon-Via (TSV), is a key technology for 3D ICs. In this paper, we propose a unified simulated annealing technology to tackle the TSV assignment problem, including the signal TSV assignment of 3D nets and 3D buses. The experiment results show the effective of the method.
  • Keywords
    integrated circuit interconnections; simulated annealing; three-dimensional integrated circuits; 3D IC; feature size; heterogeneous integration; integration density; inter-layer connection; interconnect problem; simulated annealing; three-dimensional integrated circuits; through-silicon-via assignment; Annealing; Performance evaluation; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157194
  • Filename
    6157194