A novel pre-clean process of BEOL barrier-seed process to enhance reliability performance of advanced 40nm node

Author

Cheng, Chun-Min ; Hsu, Chi-Mao ; Lin, Kun-Hsien ; Hsin-Fu Huang ; Liu, Yan-Chun ; Kun-Hsien Lin ; Jin-Fu Lin ; Huang, C.C. ; Wu, JY

Author_Institution

United Microelectron. Corp., Sinshih, Taiwan

fYear

2011

fDate

10-14 April 2011

Abstract

With scaling down of device geometry and keeping improvement of the chip resistance capacitance (RC) delay, it is necessary to reduce k value. A porous ultra low k-value (ULK) dielectric film is integrated into Cu interconnects of advanced 40 nm. There are several papers discussing about the interface effect between ULK film and barrier on reliability performance. This paper will discuss the effect of pre-clean process on reliability performance before barrier and Cu-seed layer deposition that will strong affect the interface properties. Also, the early failure mode of each pre-clean process will be discussed as well to clarify the proposed mechanism.

Keywords

cleaning; copper; integrated circuit interconnections; integrated circuit metallisation; low-k dielectric thin films; porous materials; thin films; BEOL barrier seed process; Cu; chip resistance capacitance delay; copper seed layer deposition; interface property; porous ultra low k-value dielectric film; preclean process; reliability performance; size 40 nm; Copper; Dielectric films; Inspection; Thermal stability; Wires; Failure mode; TDDB; low k; pre-clean; time-dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784552

Filename

5784552