DocumentCode
3381259
Title
A charge transport based acceleration model for interlevel dielectric breakdown
Author
Achanta, Ravi ; McLaughlin, Paul
Author_Institution
IBM Syst.&Technol. Group, Hopewell Jn, VA, USA
fYear
2011
fDate
10-14 April 2011
Abstract
A charge transport model has been applied to predict interlevel dielectric breakdown in copper interconnects. The model very accurately predicts the lifetimes of dense and porous dielectrics at long times. The predictions of the model vary significantly from currently available methodologies which fail to adequately account for copper charge transport. The results have important implications for the reliability of advanced microprocessors with copper interconnects.
Keywords
copper; electric breakdown; integrated circuit interconnections; microprocessor chips; reliability; acceleration model; advanced microprocessors; copper charge transport; copper interconnects; dense dielectrics; interlevel dielectric breakdown; porous dielectrics; reliability; Breakdown voltage; Copper; Data models; Dielectrics; Ions; Mathematical model; Predictive models; charge transport; copper interconnects; dielectric breakdown; predictive model;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784553
Filename
5784553
Link To Document