Title :
Performance and structure degradations of SiGe HBT after electromagnetic field stress
Author :
Alaeddine, A. ; Kadi, M. ; Daoud, K.
Author_Institution :
GPM, Univ. of Rouen, St. Etienne du Rouvray, France
Abstract :
This paper addresses failure analysis of electromagnetic field stress effects on SiGe HBTs reliability issues, examining the relation ship between the stress-induced current and device structure degradations. The origin of leakage currents in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure after aging was performed by Transmission Electron Microscopy (TEM) and Energy Dispersive Spectroscopy (EDS). We found clearly dislocations and interface deformation of the Titanium thin film (Ti) of all contacts. Based on the coupling of high current density and thermal effects due to Joule heating, device failures are explained. These disorders may explain the origin the large shifting of the dynamic characteristics of failed transistors.
Keywords :
Ge-Si alloys; X-ray chemical analysis; ageing; current density; deformation; dislocations; electromagnetic fields; failure analysis; heterojunction bipolar transistors; leakage currents; semiconductor device reliability; titanium; transmission electron microscopy; Joule heating; SiGe; SiGe HBT reliability; Ti; aging; complementary failure analysis; current density; dislocations; electromagnetic field stress; energy dispersive spectroscopy; interface deformation; leakage currents; stress-induced current; structure degradations; titanium thin film; transmission electron microscopy; Capacitance; Degradation; Electromagnetic fields; Reliability; Silicon; Silicon germanium; Stress; EMC; SiGe HBT; TEM; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784555
