Title :
A new ESD model induced yield loss during chip-on-film package process and it´s failure mechanism
Author :
Lee, Jian-Hsing ; Shih, J.R. ; Huang, Yu-Hui ; Lin, C.P. ; Su, David ; Wu, Kenneth
Author_Institution :
Technol. Quality & Reliability Div., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
A new model of electrostatic discharge (ESD) event is found in ICs during chip-on-film (COF) package. The behavior of this new kind of ESD is different from the human-body mode (HBM), machine model (MM) and charge device model (CDM) model. We call it the charge tape model (CTM). It often damages the gate oxides of the input circuit and output circuit in IC to result in the yield loss. The mechanism of COF package induced yield loss has been identified. Two factors dominate the yield loss. One is the ESD generation on the tape surface during COF tape reeled out process. The other one is the required high temperature for the inner lead bonding, which lowers the breakdown voltage of the gate oxide. As a result, an IC might be damaged to induce the yield loss.
Keywords :
electric breakdown; electrostatic discharge; integrated circuit packaging; integrated circuit yield; breakdown voltage; charge device model; charge tape model; chip-on-film package; electrostatic discharge; failure mechanism; gate oxides; human-body mode; machine model; yield loss; Bonding; Capacitors; Electrostatic discharge; Integrated circuits; Logic gates; Stress; Transistors; CDM; ESD; HBM; MM;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784558