A tunable active filter in CMOS for RF applications

Author

Cetinkaya, Hakan ; Tarim, Nil

Author_Institution

Electron. & Commun. Eng. Dept., Istanbul Tech. Univ., Istanbul

fYear

2008

fDate

Aug. 31 2008-Sept. 3 2008

Firstpage

121

Lastpage

124

Abstract

An active radio frequency (RF) filter based on floating active inductor circuits is presented in this work. For demonstration purposes, a third-order Chebyshev lowpass filter with an LC ladder structure has been designed for GSM applications. The filter has a cutoff frequency of 900 MHz and 0.4 dB ripple, and is tunable between 890 MHz and 960 MHz, consumes 10.5 mW power, and occupies an area of 96 mumtimes135 mum when laid out using the UMC 0.13 mum CMOS process which provides an area reduction of 80% compared to its passive filter counterpart.

Keywords

CMOS integrated circuits; active filters; radiofrequency filters; CMOS process; LC ladder structure; floating active inductor circuits; frequency 890 MHz to 960 MHz; radio frequency filter; third-order Chebyshev low pass filter; tunable active filter; Active filters; Active inductors; CMOS process; Chebyshev approximation; Cutoff frequency; Inductance; Passive filters; Q factor; Radio frequency; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on

Conference_Location

St. Julien´s

Print_ISBN

978-1-4244-2181-7

Electronic_ISBN

978-1-4244-2182-4

Type

conf

DOI

10.1109/ICECS.2008.4674806

Filename

4674806