Title :
Bias Temperature Instability model for digital circuits - predicting instantaneous FET response
Author :
Bansal, Aditya ; Zhao, Kai ; Kim, Jae-Joon ; Rao, Rahul
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We propose a semi-empirically enhanced BTI model to predict the instantaneous shift in VT due to both NBTI (in PFETs) and PBTI (in NFETs). Our proposed model uses same technology parameters as in existing model, and applied for both NBTI and PBTI. At every step of model generation, we demonstrate the correlation between our model and measured hardware. Further, we discuss the necessary steps to integrate our model with existing digital circuit simulators.
Keywords :
digital circuits; field effect transistors; semiconductor device models; NBTI; NFET; PBTI; PFET; digital circuit simulators; instantaneous FET response; negative bias temperature instability model; positive bias temperature instability model; semiempirically enhanced BTI model; Computational modeling; Data models; Degradation; FETs; Integrated circuit modeling; Predictive models; Stress;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784560