Title :
Soft Oxide Breakdown impact on the functionality of a 40 nm SRAM memory
Author :
Cheffah, Saad ; Huard, Vincent ; Chevallier, Remy ; Bravaix, Alain
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
As CMOS technology continues to downscale to a deep submicron level (40 nm and beyond), Soft Oxide Breakdown (SBD) is becoming a real problem that could lead to a serious degradation in the performances and the functional operations of SoC. In this paper we study the SBD, using two models, and quantify its impact on the functionality of a 40 nm SRAM memory.
Keywords :
CMOS integrated circuits; SRAM chips; CMOS technology; SBD; SRAM memory; SoC; size 40 nm; soft oxide breakdown impact; Arrays; Electric breakdown; Integrated circuit modeling; Libraries; Random access memory; Sensitivity; System-on-a-chip; Delay drift; SRAM functional failure; Soft Oxide Breakdown (SBD); Transistor SBD models;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784561
