Title :
Large-signal modeling and characterization of a plastic packaged HBT for use in wireless portable units
Author :
Wu, Der-Woei ; Henderson, Gregory N.
Author_Institution :
Corp. Res. & Dev. Centre, M/A-COM Inc., Lowell, MA, USA
Abstract :
A method is presented for the extraction of an accurate large-signal model for plastic-packaged GaAs HBTs. The packaged device model is extracted by a combination of DC and small-signal on-wafer characterization of the chip device and small-signal characterization of short and open package structures through on-wafer probing of ceramic launchers to the package. The technique has been applied to M/A-COM´s 32-finger HBT in an SOT-89 package; the resulting model shows excellent agreement with large-signal measurements for the packaged device, predicting the power and gain within 0.5 dB for a wide range of input power drive and device biases
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; land mobile radio; mobile radio; plastic packaging; power bipolar transistors; radio equipment; semiconductor device models; semiconductor device packaging; GaAs; M/A-COM; SOT-89; ceramic launchers; large-signal model; multifinger HBT; on-wafer probing; plastic package; wireless portable units; Ceramics; Electronics packaging; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Plastic packaging; Power measurement; Research and development; Scattering parameters; Semiconductor device measurement;
Conference_Titel :
Electrical Performance of Electronic Packaging, 1995
Conference_Location :
Portland, OR
Print_ISBN :
0-7803-3034-X
DOI :
10.1109/EPEP.1995.524884
