Title :
32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit
Author :
Thomas, O. ; Noel, J.-P. ; Fenouillet-Beranger, C. ; Jaud, M.-A. ; Dura, J. ; Perreau, P. ; Boeuf, F. ; Andrieu, F. ; Delprat, D. ; Boedt, F. ; Bourdelle, K. ; Nguyen, B.Y. ; Vladimirescu, A. ; Amara, A.
Author_Institution :
CEA/LETI, MINATEC, Grenoble, France
fDate :
May 30 2010-June 2 2010
Abstract :
A low-cost and high-manufacturability Multi-VT Ultra-Thin BOX and Body (UT2B) FDSOI technology is proposed for high-performance and low-leakage digital circuits. This concept allows setting up low, standard and high threshold voltage (VT) devices without degrading the good channel electrostatic control and the low VT dispersion of the FDSOI technology. Device electrical characteristics, process flow and physical design are described and the performance of digital circuits is evaluated.
Keywords :
digital circuits; network synthesis; silicon-on-insulator; UT2B-FDSOI technology; box FDSOI; channel electrostatic control; device electrical characteristics; high threshold voltage devices; high-manufacturability multiVT ultra-thin box and body FDSOI technology; low VT dispersion; low-leakage digital circuits; multiVT ultra-thin body; physical design; process flow; size 32 nm; CMOS technology; Circuit optimization; Degradation; Dielectric thin films; Digital circuits; Doping; Electrostatics; Leakage current; Ring oscillators; Threshold voltage;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537517
