Title :
A 65 nm CMOS - Stacked Folded Fully Differential (SFFD) PA structure for W-CDMA application
Author :
Luque, Y. ; Deltimple, N. ; Kerhervé, E. ; Belot, D.
Author_Institution :
CNRS, Univ. of Bordeaux, Talence
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
This paper presents a 65 nm CMOS-power amplifier (PA) designed for mobile communications.The PA is based on a new structure, the stacked folded fully differential (SFFD) which is inspired by a push-pull structure. The PA is designed for the UMTS W-CDMA standard which requires linearity from -20 dBm to 24 dBm output power. The power amplifier provides 31 dBm output power with 26% of power added efficiency (PAE) at 1.95 GHz. The linear gain is 20 dB and the compression point (OCP1) is 25.6 dBm. In order to meet the UMTS W-CDMA requirements, the PA is linear until 24 dBm, which is the maximum output power required by this standard.
Keywords :
3G mobile communication; CMOS integrated circuits; code division multiple access; power amplifiers; CMOS-power amplifier; UMTS W-CDMA standard; frequency 1.95 GHz; gain 20 dB; mobile communications; push-pull structure; size 65 nm; stacked folded fully differential; 3G mobile communication; CMOS technology; Communication standards; Costs; Gain; Multiaccess communication; Power amplifiers; Power generation; Wireless LAN; Wireless communication;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4674815
