DocumentCode
3381551
Title
Degradation and failure analysis of Polysilicon Resistor connecting with Tungsten contact and Copper line
Author
Huang, Clement ; Lin, Mingte ; Liang, James W. ; Juan, Alex ; Su, K.C.
Author_Institution
Reliability Technol. & Assurance Div., UMC Inc., Hsinchu, Taiwan
fYear
2011
fDate
10-14 April 2011
Abstract
The failure mechanism was studied on Polysilicon Resistor - Tungsten contact - Copper line structures. Silicide resistor could fail at high resistive interface of poly/silicide/barrier/metal because thermal mismatching for varied materials. In the case of Silicide_Block resistor, damage nearby the contact proximity (especially at Cu region) was observed, which originated from local Joule heating at the interface. Finite element analysis (FEA) was demonstrated that failure was dependent on current density and Joule heat generation.
Keywords
failure analysis; finite element analysis; resistors; Joule heating; copper line; failure analysis; finite element analysis; polysilicon resistor; silicide_block resistor; thermal mismatching; tungsten contact; Copper; Current density; Heating; Resistance; Resistors; Silicides; Cu; Finite element analysis; Joule heating; Polysilicon resistor; W; electromigration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location
Monterey, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-9113-1
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2011.5784568
Filename
5784568
Link To Document