Title :
Takagi-Sugeno fuzzy model to approximate MOSFET capacitance for VRM applications
Author :
López, T. ; Alarcón, E. ; Guinjoan, F. ; Poveda, A.
Author_Institution :
Forschungslab, Res. Group Electron. Modules (EM), Philips GmbH, Aachen, Germany
fDate :
May 30 2010-June 2 2010
Abstract :
The Takagi-Sugeno (TSK) fuzzy model has been extensively used in control applications because of its capability to efficiently approximate multidimensional characteristics. Its application to model circuits and devices has been hitherto reduced, despite its potential benefits. This work is devoted to model by means of TSK scheme the nonlinear characteristics of power MOSFET capacitances to evaluate its impact in the efficiency of Voltage Regulator Modules (VRM) targeting microprocessor supply. A systematic synthesis procedure is proposed to derive the TSK model from experimental data. Implementation of the fuzzy model in a general-purpose circuit simulator is included and its comparison with a look-up-table is discussed.
Keywords :
fuzzy set theory; microprocessor chips; power MOSFET; voltage regulators; TSK scheme; Takagi-Sugeno fuzzy model; VRM; general-purpose circuit simulator; look-up-table; microprocessor supply; nonlinear characteristics; power MOSFET capacitances; systematic synthesis procedure; voltage regulator modules; Capacitance; Fuzzy control; MOSFET circuits; Microprocessors; Multidimensional systems; Power MOSFET; Power system modeling; Regulators; Takagi-Sugeno model; Voltage;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537519
