Title :
Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers: experiment and modeling
Author :
Belenky, G.L. ; Reynolds, C.L., Jr. ; Kazarinov, R.F. ; Swaminathan, V. ; Luryi, S. ; Lopata, J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper we show experimentally that utilization of a doped waveguide (or a separate confinement layer-SCH layer) leads to suppression of electron leakage current in multi-quantum-well devices. Our experiments reveal the influence of p-doping profile on the temperature sensitivity of threshold.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; leakage currents; quantum well lasers; semiconductor device models; semiconductor doping; waveguide lasers; InGaAsP-InP; SCH layer; doped waveguide; electron leakage current; p-doping profile; separate confinement layer; strained multi-quantum-well InGaAsP-InP lasers; temperature sensitivity; threshold; Current density; Current measurement; Density measurement; Electron emission; Indium phosphide; Laser modes; Leakage current; Thermionic emission; Zinc;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553752
