DocumentCode
3381582
Title
A 1V CMOS LNA for low power ultra-wideband systems
Author
Allidina, Karim ; El-Gamal, Mourad N.
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC
fYear
2008
fDate
Aug. 31 2008-Sept. 3 2008
Firstpage
165
Lastpage
168
Abstract
This paper presents a broadband LNA for low power, low data-rate ultra-wideband systems in the frequency band of 100-960 MHz. The LNA is based on a common-gate structure with active shunt-feedback to provide a broadband 50 Omega input match and a low noise figure with minimal bias current. The simulated power gain of the LNA is 10.5 dB with a 3-dB bandwidth of 1.66 GHz. The noise figure across the entire band is between 5.5 and 6 dB with an average value of 5.6 dB. The IIP3 ranges from -3.5 to -5.5 dBm, with an average value of -4.4 dBm. The circuit is designed using a standard 90 nm CMOS process, and draws only 425 muA from a 1 V supply.
Keywords
CMOS integrated circuits; low noise amplifiers; ultra wideband communication; CMOS LNA; active shunt-feedback; bandwidth 1.66 GHz; common-gate structure; current 425 muA; frequency 100 MHz to 960 MHz; gain 10.5 dB; low power ultra-wideband systems; resistance 50 ohm; size 90 nm; voltage 1 V; Bandwidth; Broadband amplifiers; Circuits; Energy consumption; FCC; Frequency; Impedance matching; Noise figure; Topology; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location
St. Julien´s
Print_ISBN
978-1-4244-2181-7
Electronic_ISBN
978-1-4244-2182-4
Type
conf
DOI
10.1109/ICECS.2008.4674817
Filename
4674817
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