DocumentCode
3381625
Title
High-voltage rectifier and voltage doubler in conventional 0.18μm CMOS process
Author
Lee, Edward K F
Author_Institution
Alfred Mann Found., Santa Clarita, CA, USA
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
605
Lastpage
608
Abstract
A high-voltage full-wave rectifier and a high-voltage voltage doubler for converting an induced voltage on a coil to a DC voltage were demonstrated in a conventional 0.18μm CMOS process using standard 3.3V I/O devices. High-voltage operations were achieved by stacking a number of transistors with their gate voltages controlled by the induced voltages. For a 300kHz, 14.2V peak-to-peak induced voltage, the voltage doubler achieved an efficiency of 92.5% for an output voltage of 13.7V with an output power of 2.9mW.
Keywords
CMOS integrated circuits; power integrated circuits; rectifying circuits; CMOS process; DC voltage; high voltage fullwave rectifier; high voltage rectifier; high voltage voltage doubler; induced voltage; power 2.9 mW; size 0.18 mum; voltage 13.7 V; voltage 14.2 V; voltage 3.3 V; Batteries; CMOS process; Coils; Coupling circuits; Diodes; Energy consumption; Implantable biomedical devices; Low voltage; Power generation; Rectifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537522
Filename
5537522
Link To Document