• DocumentCode
    3381629
  • Title

    Improving lifetime of Cu interconnects with adding compressive stress at cathode end

  • Author

    Arnaud, L. ; Lamontagne, P. ; Petitprez, E. ; Galand, R.

  • Author_Institution
    CEA LETI-MINATEC, Grenoble, France
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    We show that Cu interconnect lifetime is increased, at least by a factor of 2, with an electromigration (EM) pre-stress. Stress modeling shows that EM induced void at one line end creates compressive stress at the other end. High compressive stress induces an incubation time before EM starts. Incubation time is proportional to the amount of compressive stress induced.
  • Keywords
    cathodes; copper; electromigration; integrated circuit interconnections; stress effects; EM induced void; cathode end; compressive stress; copper interconnect lifetime improvement; electromigration pre-stress; stress modeling; Cathodes; Compressive stress; Copper; Mathematical model; Resistance; Cu interconnect; electromigration; stress modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784571
  • Filename
    5784571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3381629