DocumentCode :
3381633
Title :
Research on electromechanical model of micro-accelerometer based on SOI technology
Author :
Qian, Keqiang ; Luo, Wen ; Yu, Qi
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
433
Lastpage :
436
Abstract :
To cope with the imprecise model of electro-mechanical integration simulation and complex process of parameter extraction, a Simulink model of micro-accelerometer based on SOI technology is proposed in this paper. The model realizes the very closely results between the simulation without device-level circuits and Coventor Ware simulation. Compared with the results of experimental test, the error of voltage sensitivity is less than 2%, the error of differential capacitance sensitivity is less than 8%, and acceleration bias is less than 10%. So the model can realize the simulation of electro-mechanical integration and be helpful in fast optimization of the parameter of structure and circuits, and the model has better reference function to the research of MEMS inertial device.
Keywords :
accelerometers; micromechanical devices; silicon-on-insulator; CoventorWare simulation; MEMS inertial device; SOI technology; Simulink model; acceleration bias; complex process; device-level circuits; differential capacitance sensitivity; electro-mechanical integration simulation; electromechanical model; imprecise model; micro-accelerometer; parameter extraction; reference function; voltage sensitivity error; Acceleration; Equations; Silicon; Switches; Electromechanical Integration; SOI; micro-accelerometer; switched-capacitor amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157214
Filename :
6157214
Link To Document :
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