CMOS Compatible Out-of-Plane & In-Plane Magnetometers

Author

El Ghorba, M. ; André, Nicolas ; Sobieski, Stanislas ; Raskin, Jean-Pierre

Author_Institution

Univ. Catholique de Louvain, Louvain-la-Neuve

fYear

2007

fDate

10-14 June 2007

Firstpage

2373

Lastpage

2376

Abstract

Three-dimensional MEMS magnetometers with use of residual stresses in thin multilayers are presented. Half-loop cantilevers based on Lorentz-force deflection convert magnetic flux in DeltaV changes thanks to piezoresistive transducers mounted in Wheatstone bridge. Magnetic field in the order of 10 Gauss was measured with a sensitivity of 0.015 mV/Gauss. Ferromagnetic nickel plates also show 20 mum- vertical deflection in magnetic field non-aligned with the residual magnetization.

Keywords

CMOS integrated circuits; internal stresses; magnetometers; micromechanical devices; piezoresistive devices; transducers; CMOS compatible out-of-plane; Lorentz-force deflection; MEMS magnetometers; Wheatstone bridge; ferromagnetic nickel plates; half-loop cantilevers; in-plane magnetometers; piezoresistive transducers; residual magnetization; residual stresses; Bridge circuits; Gaussian processes; Magnetic field measurement; Magnetic flux; Magnetic multilayers; Magnetometers; Micromechanical devices; Piezoresistance; Residual stresses; Transducers; CMOS Compatible; MEMS; Magnetic sensor; Magnetometer;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2007. TRANSDUCERS 2007. International

Conference_Location

Lyon

Print_ISBN

1-4244-0842-3

Electronic_ISBN

1-4244-0842-3

Type

conf

DOI

10.1109/SENSOR.2007.4300647

Filename

4300647