Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress

The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small signal equivalent circuit is a key concern to integrate the RF reliability simulation at compact model level. In this work, an accurate setup which allows the application of RF stress and the monitoring of DC/RF parameters is detailed. Hot carrier stress is performed on MOSFET and a physical analysis of the small signal equivalent circuit aging is done.